Surface emitting semiconductor laser, and method and apparatus for fabricating the same

ABSTRACT

A method of fabricating a surface emitting semiconductor laser includes the following steps. A first laminate of semiconductor layers and a second laminate of semiconductor layers are formed on a substrate. The first laminate includes a first reflection mirror layer of a first conduction type, an active region, a III-V semiconductor layer containing Al, and a second reflection mirror layer of a second conduction type, the second laminate being used for monitoring and having an oxidizable region. The first and second laminates are etched so as to form mesas on the substrate in which side surface of the III-V semiconductor layer contained in the first laminate is exposed. Oxidization of the III-V semiconductor layer from the side surface is started at an oxidization rate. During oxidization, a reflectance of the second laminate for monitoring or its variation is monitored, and oxidization of the III-V semiconductor layer is terminated after a constant time from a time when the reflectance or its variation reaches a corresponding given value.

This is a Division of application Ser. No. 10/384,675 filed Mar. 11,2003. The entire disclosure of the prior application is herebyincorporated by reference herein in its entirety.

BACKGROUND

1. Field of the Invention

The present invention relates to a surface emitting semiconductor laserused as a source for optical information processing, opticalcommunications, optical recording and image forming. The presentinvention also relates to a method and apparatus for fabricating such asurface emitting semiconductor laser. More particularly, the presentinvention relates to a technique of accurately defining an aperturesurrounded by a selectively oxidized portion of a current confinementregion.

2. Description of the Related Art

Recently, there has been an increased demand for a surface emittingsemiconductor laser capable of easily realizing an array of sources inthe technical fields of optical communications and opticalinterconnections. Such a laser is also called vertical-cavitysurface-emitting laser diode (VCSEL).

The surface emitting semiconductor laser is categorized into a protoninjection type with a gain waveguide structure, and a selectiveoxidization type with a refractive ratio waveguide structure. Nowadays,the latter is getting the mainstream. Generally, the selectiveoxidization type semiconductor laser has a laser portion of a mesastructure. A current narrowing or confining region formed by selectivelyoxidizing part of an AlAs layer or AlGaAs layer is formed in thevicinity of the active region of the mesa. The current confinement layerincreases the resistivity and reduces the refractive index. This resultsin an optical waveguide path.

The degree of dimensional accuracy of the non-oxidized region surroundedby an aperture of the current confinement layer and defined by theselectively oxidized region is a very important factor that determinesthe device performance. The threshold current of laser and thetransverse oscillation mode greatly depend on the diameter of theaperture.

Generally, the aperture of the current confinement region is formed by awet oxidization method. This method employs a carrier gas of nitrogen,and transports a pure water vapor heated up to approximately 100° C. toa chamber. The AlAs or AlGaAs layer having the side surface exposed isoxidized therefrom.

However, it is very difficult to reproducibly control the distance ofoxidation that advances from the side surface of the mesa on the processbasis and to form the aperture of the current confinement layer asdesigned. This is because the mesa may have precision error caused byetching, and the oxidization rate depends on the temperature of thewater vapor, the amount of gas transported, and the thickness of anaturally oxidized film on the side surface of the AlAs or AlGaAs layer.

A proposal to solve the above problems is described in JapaneseUnexamined Patent Publication No. 2001-93897. The proposal describes theuse of a sample for monitoring and tracks the degree of advance ofoxidization reaction on the wafer or substrate, with which degree theoxidization reaction of the current confinement layer is controlled. Themonitor-use sample and the current confinement layer on the wafer orsubstrate are put in an oxidizing chamber and are subject tosimultaneous oxidizing. The oxidization reaction on the currentconfinement region is controlled by monitoring a reflected light that isvaried due to change of the oxidized region of the monitor-use sample.

However, the proposal heats the temperature in the oxidizing chamber to400° C. for oxidization for forming the current confinement layer. Thus,the AlAs or AlGaAs layer is oxidized at a comparatively high rate ofoxidization. Even when the oxidization reaction is terminated bymonitoring the reflected light from the monitor-use sample, oxidizationof the AlAs or AlGaAs layer from the side surface of the mesa mayadvance to some extent, so that the aperture of the current confinementlayer (diameter of the aperture) cannot fall within the design range.Further, the production yield will be degraded if the aperture definedby the current confinement layer is not reproduced accurately on theprocess basis. This drives up the cost of producing the surface emittingsemiconductor laser devices.

SUMMARY

The present invention has been made in view of the above circumstancesand provides a surface emitting semiconductor laser and a method andapparatus for fabricating the same.

According to an aspect of the present invention, a method of fabricatinga surface emitting semiconductor laser has the steps of: forming a firstlaminate of semiconductor layers and a second laminate of semiconductorlayers on a substrate, the first laminate including a first reflectionmirror layer of a first conduction type, an active region, a III-Vsemiconductor layer containing Al, and a second reflection mirror layerof a second conduction type, the second laminate being used formonitoring and having an oxidizable region; etching the first and secondlaminates so as to form mesas on the substrate in which side surface ofthe III-V semiconductor layer contained in the first laminate isexposed; starting oxidization of the III-V semiconductor layer from theside surface at an oxidization rate; and monitoring a reflectance of thesecond laminate for monitoring or its variation and terminatingoxidization of the III-V semiconductor layer after a constant time froma time when the reflectance or its variation reaches a correspondinggiven value.

According to another aspect of the present invention, a method offabricating a surface emitting semiconductor laser has the steps of:forming first and second mesas respectively including III-Vsemiconductor layers containing Al, side surfaces of the III-Vsemiconductor layers being exposed; optically monitoring an oxidizedcondition of the III-V semiconductor layer of the first mesa while thefirst and second mesas are exposed to an oxidization ambient set at atemperature lower than a predetermined temperature; and forming acurrent confinement region by controlling the oxidized region of theIII-V semiconductor layer of the second mesa on the basis of results ofoptical monitoring.

According to yet another aspect of the present invention, a method offabricating a surface emitting semiconductor laser has the steps of:forming a laminate of a first reflection mirror layer of a firstconduction type, an active region thereon, a III-V semiconductor layercontaining Al, and a second reflection mirror of a second conductiontime on the active region; etching predetermined layers that forms thelaminate so that a side surface of the III-V semiconductor layer can beexposed; oxidizing the III-V semiconductor layer at a temperature equalto or lower than 375° C.; monitoring reflectance of the III-Vsemiconductor layer or its variation; and terminating oxidization of theIII-V semiconductor layer when a given constant time elapses after thereflection or its variation reaches a corresponding given value.

According to a further aspect of the present invention, an apparatus forfabricating a surface emitting semiconductor laser having a currentconfinement region obtained by selectively oxidizing part of a III-Vsemiconductor layer containing Al, has: a projection part that projectslight onto at least the III-V semiconductor layer for oxidization; aphotoelectric conversion part that converts reflected light from theIII-V semiconductor layer into an electrical signal; an operation partthat detects an oxidized condition on the III-V semiconductor layer onthe basis of the electrical signal and outputs a signal when advance ofoxidization goes beyond a given oxidized region; and an oxidizationcontrol part that terminates oxidization of the III-V semiconductorlayer when a given constant time elapses after receiving the signaloutput by the operation part.

According to a still further aspect of the present invention, a surfaceemitting semiconductor laser has: a substrate; and a laminate on thesubstrate, the laminate including a first reflection layer of a firstconduction type, an active region on the first reflection layer, acurrent confinement layer including an oxidized region, and a secondreflection layer on the current confinement layer, a mesa including arange from the second reflection layer to the current confinement layer,the oxidized region of the current confinement layer extending inwardsfrom a side surface of the mesa, and has been oxidized at a temperatureequal to or lower than 375° C.

BRIEF DESCRIPTION OF THE DRAWINGS

Preferred embodiments of the present invention will be described indetail based on the following figures, wherein:

FIG. 1A is a cross-sectional view of a surface emitting semiconductorlaser according to an embodiment of the present invention, wherein thecross-section is taken along a line X-X shown in FIG. 1B;

FIG. 1B is a plan view of the surface emitting semiconductor laser shownin FIG. 1A;

FIGS. 2A, 2B and 2C are cross-sectional views showing steps of a methodof fabricating the semiconductor laser shown in FIGS. 1A and 1B;

FIGS. 3A and 3B are cross-sectional views showing steps of the method,which steps follow those shown in FIGS. 2A-2C;

FIG. 4 is a graph of a reflectance vs. oxidization time characteristicof an AlAs layer;

FIG. 5 illustrates a relation between oxidized conditions of an AlAslayer in a mesa for monitoring and those of an AlAs layer in a laserportion;

FIG. 6 is a graph of an oxidization rate vs. oxidization temperaturecharacteristic of an AlAs layer; and

FIG. 7 is a block diagram of an apparatus for fabricating a surfaceemitting semiconductor laser according to an embodiment of the presentinvention.

DESCRIPTION OF THE PREFERRED EMBODIMENTS

A description will now be given of embodiments of the present inventionwith reference to the accompanying drawings.

FIG. 1A is a cross-sectional view of a surface emitting semiconductorlaser according to a first embodiment of the present invention, and FIG.1B is a plan view thereof. The present embodiment is a selectiveoxidization type surface emitting semiconductor laser 100 equipped witha laser portion 101 having a rectangular mesa structure (post structureor pillar structure). A protection film that covers the laser portion(mesa) 101 and a bonding portion that extends from a metal contact layerare omitted from illustration for the sake of simplicity. Although themesa or post employed in the present embodiment has a rectangular crosssection, it may have a circular cross section.

The laser 101 has an n-type GaAs substrate 1, on which an n-type bufferlayer 2 is provided. An n-type lower DBR (Distributed Bragg Reflector) 3is provided on the buffer layer 2. On the lower DBR 3, laminated are anundoped lower spacer layer 4, an undoped quantum well active layer 5,and an undoped upper spacer layer 6 in this order. An active region 7 isformed so as to include the layers 4, 5 and 6. A p-type upper DBR 8 anda p-type contact layer 9 are laminated on the active region 7 in thisorder. The lowermost layer of the upper DBR 8 is a p-type AlAs layer 10,which serves as a current confinement layer equipped with a rectangularaperture 10 a surrounded by an oxidized region.

A laser outgoing window 11 is formed in the center of the laser portion10, and has a rectangular shape. The center of the current confinementlayer 10 coincides with the center of the aperture 10 a, and coincideswith an optical axis extending on the centerline of the mesa 101 in thevertical direction from the substrate 1. An interlayer insulation film12 covers the side surface and bottom of the mesa 101. A metal layer 13is formed on the interlayer insulation film 12. The metal layer 13 isisolated from the mesa by the interlayer insulation film 12, and iselectrically connected to the contact layer 9 on the top portion of thelaser portion 101. The metal layer 13 serves as a p-side electrode. Abackside electrode 14 is provided on the back surface of the substrate1.

The lower DBR 3 is a multiple laminate of n-type al_(0.9)Ga_(0.1)Aslayers and Al_(0.3)Ga_(0.7)As layers, each of which has a thicknessλ/4n_(r) where λ is the oscillation wavelength and n_(r) is therefractive index of the medium. The paired layers having differentcomposition ratios are alternately laminated to a thickness of 40.5periods. The carrier concentration of the lower DBR 3 is 3×10¹⁸ cm⁻³after silicon that is an n-type impurity is doped.

In the active region 7, the lower spacer layer 4 is an undopedAl_(0.6)Ga_(0.4)As layer. The quantum well active layer 5 includes anundoped Al_(0.11)Ga_(0.89)As quantum well layer and an undopedAl_(0.3)Ga_(0.7)As barrier layer. The upper spacer layer 6 is an undopedAl_(0.6)Ga_(0.4)As layer.

The upper DBR 8 is a multiple laminate of p-type Al_(0.9)Ga_(0.1)Aslayer and p-type Al_(0.3)Ga_(0.7)As layers, each having a thicknessλ/4n_(r) where λ is the oscillation wavelength and n_(r) is therefractive index of the medium. The paired layers having differentcomposition ratios are alternately laminated to a thickness of 30periods. The carrier concentration of the upper DBR 8 is 3×10¹⁸ cm⁻³after carbon that is a p-type impurity is doped.

The p-type contact layer 9 is a GaAs layer and is 20 nm thick. Thecarrier concentration of the p-type contact layer 9 is 1×10²⁰ cm⁻³ aftercarbon that is a p-type impurity is doped. The metal layer 13, whichserves as the p-side electrode, is a laminate of Ti/Au.

Although not shown in FIGS. 1A and 1B, in order to reduce the seriesresistance of the laser portion, practically, an intermediate (graded)layer having an intermediate mixed crystal ratio of GaAs/AlAs betweenthe p-type Al_(0.9)Ga_(0.1)As layer and the p-type Al_(0.3)Ga_(0.7)Aslayer may be provided on the upper DBR 8 or below the lower DBR 3.

A description will now be given of a method of fabricating the surfaceemitting semiconductor laser shown in FIGS. 1A and 1B. As shown in FIG.2A, the buffer layer 2, the lower DBR 3, the active region 7, the AlAslayer 10, the DBR 8 and the contact layer 9 are laminated on thesubstrate 1 in turn.

As shown in FIG. 2B, patterned silicon oxide layers 201 and 202 areprovided on the contact layer 9. The silicon oxide layers 201 and 301serve as mask layers for defining mesas on the substrate 1.

As shown in FIG. 2C, the contact layer 9, the upper DBR 8, the activeregion 7 and part of the lower DBR 3 are anisotropically etched byreactive ion etching (RIE) using a mixed gas of boron trichloride andchlorine (BCl₃ and Cl₂). This etching results in the mesa 210 of thelaser portion and a mesa 310 for monitoring. It is not necessary tocause etching to advance up to the lower DBR 3 but to expose at leastthe side surface of the AlAs layer 10. For example, etching of up to theactive layer 5 of the active region 7 may be accepted.

The mesa 210 of the laser portion is like a square pillar orparallelepiped, and has a planer shape of square. Preferably, themonitor-use mesa 310 has a rectangular parallelepiped, and has a planershape of a long rectangle. The long sides of the mesa 310 (perpendicularto the drawing sheet) are longer than the short sides thereof. Theshort-side length of the mesa 310 is shorter than one side of the squaremesa 210, and the long-side length thereof is longer than one sidethereof.

Then, the AlAs layer 10 is selectively oxidized. This oxidization useswet oxidization in which a water vapor obtained by bubbling pure waterheated to 95° C. is transported to a wet oxidization chamber withnitrogen being used as carrier gas. The substrate is put in theoxidization chamber in advance and the in-chamber temperature is set atapproximately 340° C. The AlAs layers included in the mesas 210 and 310are oxidized from the side surfaces thereof.

In order to control the oxidization reaction on the AlAs layers, theoxidized condition of the AlAs layer of the monitor-use mesa 310 ismonitored and is used to control the non-oxidized portion of the AlAslayer of the laser-use mesa 210, namely, the aperture size.

In AlAs (or AlGaAs), AlO_(x) is formed in an oxidized portion, whichbecomes insulation, and has a reflection ratio (reflectance) differentfrom that of AlAs. For instance, the average reflectance in thewavelength range of 800-1000 nm is 0.45 for AlAs and is 0.58 forAlO_(x). Thus, by measuring the average reflectance of the AlAs layer inprogress of oxidization, it is possible to track the degree of progressof oxidization reaction on the AlAs layer.

Taking into consideration the above, light in the wavelength range of400 nm-1100 nm is projected onto a region of the monitor-use mesa 310including the AlAs layer 311 (substantially, the surface of the mesa310). Then, reflected light is sensed by a photoelectric element such asa photodiode or phototransistor and is then monitored. In this manner,the oxidized condition on the AlAs layer in progress can be known.

FIG. 4 is a graph of variation in the average reflectance of the AlAslayer 311 of the monitor-use mesa 310, and FIG. 5 shows a relationbetween the oxidized condition of the AlAs layer 311 of the monitor-usemesa 310 and the oxidized condition of the AlAs layer of the mesa 210 ofthe laser portion. The AlAs layer of the mesa 210 has an approximatelysquare planer pattern (the region that is to be oxidized), and a side ofa length Hr. The planer pattern of the AlAs layer 311 of the monitor-usemesa 310 has length Hm along the short-length side and Vm along thelong-length side, wherein a condition such that Hm<Hr and Hm<<Vm stands.

At an oxidization starting time A, oxidization of the AlAs layers of themesas 210 and 310 has not yet been started. At that time, the averagereflectance obtained from the monitor-use mesa 310 has a given value r.When time t1 elapses, that is, at time B, oxidization has evenlyadvanced inwards from the side surface of the AlAs layer of the mesa210. This oxidization defines a square aperture that is a non-oxidizedregion located in the center of the mesa 210. In contrast, themonitor-use mesa 310 has the long side Vm that is much longer than theshort side Hm, so that it can be assumed that oxidization of the AlAslayer 311 virtually advances inward from the opposing long sides Vmthereof. The average reflectance of the AlAs layer 311 at that time isr1, which is higher than the average reflectance r obtained at time A.

When oxidization time 2 elapses, namely, at time C, the AlAs layer 311of the mesa 310 is totally oxidized, and the average reflectance at thistime is r2, which is higher than r1. In contrast, since the width Hr ofthe mesa 210 of the laser portion is greater than Hm, a non-oxidizedregion serving as an aperture P1 remains in the mesa 210.

According to the present embodiment of the invention, in order to formaperture Px approximately equal to the designed size in the mesa 210,the oxidization process is terminated at time t3 after a given constanttime from time C when oxidization of the AlAs layer 311 of themonitor-use mesa 310 is completed.

When the AlAs layer 311 of the mesa 310 is totally oxidized, the averagereflectance r2 thereof becomes constant. In other words, variation inthe average reflectance of the completely oxidized AlAs layer 311 iszero. In order to verify that the average reflectance is zero at time C,it is necessary to obtain the average reflectance at a time after timet2. When it is attempted to terminate the oxidization process at timet2, oxidization of the AlAs layer advances by such a delay. It istherefore difficult to obtain the aperture Px as designed.

Taking into consideration the above, a relation between time C and acorresponding aperture P 1 is selected beforehand, and the process timenecessary to detect zero-settlement of variation in the averagereflectance is considered. The oxidization process is terminated afterthe period of time (t3-t2) longer than the process time elapses, so thatthe aperture Px can be obtained as designed. It is to be noted that theoxidization rate is proportional to the oxidization temperature. If theoxidization temperature is too high, it will be difficult to define theaperture Px by control of the period (t3-t2). It is therefore requiredto select an appropriate oxidization rate.

In the present embodiment, one side of the aperture Px is 3 μm long attime D, and one side of the aperture P1 just before time D1 is 4 μmlong. In order to cause oxidization to advance from the aperture P1 tothe aperture Px, the oxidization distance is equal to 0.5 μm(oxidization advances form both sides and an oxidization distance of 0.5μm is assumed with the difference between Px and P1 being equal to 1μm). It is therefore necessary to realize 0.5 μm oxidization during theperiod from time C to time D.

FIG. 6 is a graph showing the relation between oxidization rate andoxidization temperature for AlAs (see Bikash Koley et al., “Kinetics ofgrowth of AlAs oxide in selectively oxidized vertical cavity surfaceemitting lasers, Journal Applied Physics, 82,4586, 1997). As shown inFIG. 6, an oxidization rate of 0.5 μm/min is observed at an oxidizationtemperature of 380° C., and the period (t3-t2) is thus equal to about 1minute. In practice, it is very difficult to regulate the oxidizationwithin such a short period because of the time necessary to detectvariation in the average reflectance at time C. Alternatively, it ispossible to add an allowance to the period (t3-t2) by narrowing thewidth Hm of the pattern of the AlAs layer 311 of the monitor-use mesa310. However, this may degrade the accuracy of control of the aperturePx. With the above in mind, the oxidization temperature is set lowerthan 380° C., preferably, lower than 375° C.

The following may be used as means for detecting variation in thereflectance at time C. For example, the reflectance isprimary-differentiated with respect to time to thus obtain the variationratio. It is also possible to perform secondary differentiation to thusobtain the extreme value. Besides, time C may be identified byextrapolation. This is as follows. An increasing (or decreasing) sectionof the reflectance is expressed by a straight line. A cross point wherethe straight line crosses a portion extending from the end point(variation in the reflectance is ceased or reduced) is obtained and setas the new end point.

By the oxidization control mentioned above, as shown in FIG. 3A, part ofthe AlAs layer of the mesa 210 is selectively oxidized, so that thecurrent confinement layer 10 having the aperture in the center thereofcan be formed.

Referring to FIG. 3A again, the silicon oxide layers 201 and 301 used asthe etching masks are removed, and the interlayer insulation film 12 isprovided so as to cover the mesa 210. It is not necessarily required toapply the process that follows the step of forming the interlayerinsulation film 12 to the monitor-use mesa 310.

Then, an outgoing window 11 is formed in the interlayer insulation film12 on the top of the mesa, and the metal layer 13 connected to thecontact layer 9 is formed. The metal layer 13 serves as the p-sideelectrode. Then, the n-side backside electrode 14 is formed on the backsurface of the substrate 1.

Various monitor methods other than the mesa 310 for monitoring theoxidized condition may be used.

In the foregoing, the mesa 310 has the rectangular planer pattern of theAlAs layer 311. However, the mesa 310 is not limited to that shape, butmay have a circular, oval, ellipse, or polygonal planer shape.

It is possible to use multiple mesas on the substrate, each beingconfigured as the mesa 310. For instance, it is possible to usestripe-like patterns repeatedly arranged, each having a rectangularpattern like that of the AlAs layer 311. By checking lights reflected bythe multiple patterns or mesas, it is possible to monitor the oxidizedcondition more accurately and reliably.

The monitor-use mesa 310 may be omitted. For example, light is projectedonto the mesa surface of the laser portion in progress, and the oxidizedcondition on the AlAs layer is directly monitored. Using the oxidizedcondition thus monitored, the oxidization reaction on the AlAs layer iscontrolled.

The mesas 210 and 310 are not limited to the square and rectangularshapes but may have cylindrical shapes. The current confinement (opticalconfinement) layer 10 is not limited to the AlAs layer but may be madeof III-V semiconductors containing Al such as AlGaAs.

The upper DBR 8 and the lower DBR 3 are respectively of p and n types,but may be of n and p types. In a case where the outgoing light isextracted from the backside of the substrate 1, the number of the upperDBR 8 is set larger than that of the lower DBR 3 so that the upper DBR 8has a higher reflectance.

The quantum well active layer is not limited to GaAs/AlGaAs-basedsemiconductors but may be made of, for example, GaAs/InGaAs-basedsemiconductors or GaAs/GaInNAs-based semiconductors. The emissionwavelength of light emitted from the quantum well layer is transparentto the GaAs substrate 1. This allows the outgoing light to be taken fromthe backside of the substrate 1 and brings about a process merit. In theforegoing, the contact layer 9 and the upper DBR 8 are handled asfunctionally separate layers. However, the contact layer 9 is part ofthe upper DBR 8.

FIG. 7 is a block diagram of an apparatus for fabricating the surfaceemitting semiconductor laser. An apparatus 600 fabricates the surfaceemitting semiconductor laser 100 having the current confinement regionobtained by selectively oxidizing part of a III-V semiconductor layercontaining Al, the apparatus. The apparatus 600 is configured asfollows. A lamp 601, which serves as a projection part, projects lightonto at least the III-V semiconductor layer (10 or 311) for oxidization.A photodetector 602, which serves as a photoelectric conversion part,converts reflected light from the III-V semiconductor layer into anelectrical signal. An operation part 603 detects an oxidized conditionon the III-V semiconductor layer on the basis of the electrical signaland outputs a signal when advance of oxidization goes beyond a givenoxidized region. A controller 604, which serves as an oxidizationcontrol part, terminates oxidization of the III-V semiconductor layerwhen a given constant time elapses after receiving the signal output bythe operation part.

Finally, the description given before is summarized below.

According to an aspect of the present invention, the method offabricating a surface emitting semiconductor laser includes the stepsof: forming a first laminate of semiconductor layers and a secondlaminate of semiconductor layers on a substrate, the first laminateincluding a first reflection mirror layer of a first conduction type, anactive region, a III-V semiconductor layer containing Al, and a secondreflection mirror layer of a second conduction type, the second laminatebeing used for monitoring and having an oxidizable region; etching thefirst and second laminates so as to form mesas on the substrate in whichside surface of the III-V semiconductor layer contained in the firstlaminate is exposed; starting oxidization of the III-V semiconductorlayer from the side surface at an oxidization rate S; and monitoring areflectance of the second laminate for monitoring or its variation andterminating oxidization of the III-V semiconductor layer after aconstant time T from a time when the reflectance or its variationreaches a corresponding given value. Thus, the distance of oxidizationthat advances inwards from the side surface of the first laminate can becontrolled by the oxidization rate S and time T. This enables reliableand accurate reproduction of the aperture in the current confinementlayer.

Preferably, assuming that an aperture that is an non-oxidized region ofthe III-V semiconductor layer of the first laminate is denoted as D whenthe reflectance or its variation of the second laminate for monitoringreaches the corresponding given value and is also denoted as D1 whenoxidization is ended, the constant time T is determined based on thedifference between the D and D1 and the oxidization rate S. The constanttime T starts from the time when the reflectance of the second laminateor its variation reaches the corresponding given value, and isdetermined based on the above-mentioned difference. It is thus possibleto form the aperture (D1) accurately.

Preferably, the oxidization rate is determined based on the oxidizationtemperature of the III-V semiconductor layer. For example, when theIII-V semiconductor layer is an AlAs layer, it is preferable to oxidizethe AlAs layer at a temperature equal to or lower than 375° C.Oxidization advances at a relatively high rate over 375° C. This maymake it difficult to control the constant time T based on thereflectance of the second laminate for monitoring or its variation.

For a temperature equal to or lower than 375° C., the oxidization rate Sis 0.5 μm/min or lower, so that the time control for ending theoxidization reaction can be controlled easily. When the aperture (D1) ofthe non-oxidized region of the AlAs layer is approximately 3 μm long,oxidization at 375° C. or lower is very effective. Preferably, theaperture has a circular shape. However, the aperture may have any shapesuch as an oval, ellipse, rectangular, or polygonal shape. The shape ofthe aperture depends on the shape of the mesa shape (post shape) of thelaser portion. The III-V semiconductor layer containing Al may be anAlGaAs layer.

Preferably, the second laminate for monitoring includes a second mesasimultaneously formed when the mesa is formed, and the second mesaincluding a second III-V semiconductor layer containing Al and having anexposed side surface. Thus, the first and second mesas have an identicallayer structure, so that the same oxidization takes place in the firstand second mesas. It is therefore possible to reliably controloxidization of the III-V semiconductor layer containing Al by monitoringthe reflectance of the second laminate for monitoring.

The second laminate for monitoring may include multiple second mesas,each of which includes a second III-V semiconductor layer containing Aland having an exposed side surface. This monitors the reflectance of thesecond laminate or its variation more accurately.

Preferably, a second oxidizable region of the second III-V semiconductorlayer in the first laminate may be smaller than the region of the III-Vsemiconductor layer included in the first laminate. Thus, oxidizationcan be stopped when the given time elapses after the starting time whenthe second region in the second laminate for monitoring is totallyoxidized, in other words, when variation in the reflectance becomesequal to zero. The above oxidization control results in the veryaccurate aperture in the III-V semiconductor layer of the laser portion.It is easy to reliably detect the starting time when variation in thereflectance becomes equal to zero. Thus, there is no great error indetection of the starting time, so that the current confining layer theaperture can be produced with high dimensional accuracy.

According to another aspect of the present invention, the method offabricating a surface emitting semiconductor laser includes the stepsof: forming first and second mesas respectively including III-Vsemiconductor layers containing Al, side surfaces of the III-Vsemiconductor layers being exposed; optically monitoring an oxidizedcondition of the III-V semiconductor layer of the first mesa while thefirst and second mesas are exposed to an oxidization ambient set at atemperature lower than a predetermined temperature; and forming acurrent confinement region by controlling the oxidized region of theIII-V semiconductor layer of the second mesa on the basis of results ofoptical monitoring. Thus, the first and second mesas are subject to thecommon process environment, and oxidization thereof depends on commonenvironment factors. It is therefore possible to accurately form theaperture of the current confinement region.

The first and second mesas may be simultaneously formed on the substrateso as to have an identical composition, and the III-V semiconductorlayer of the first mesa has an oxidizable region, which is smaller thanthat of the III-V semiconductor layer of the second mesa. The identicalcomposition means that the first and second mesas have the same layers,so that the firs and second mesas are placed under the same conditionfor oxidization. By using the comparative small oxidizable region of thefirst mesa, it is possible to cease oxidization of the first mesa when asituation that the second mesa is totally oxidized is detected. Forexample, it is possible to detect, from the reflectance of the firstmesa, completion of oxidization of the oxidizable region of theAl-contained III-V semiconductor layer of first mesa and to terminate ofthe Al-contained III-V semiconductor layer of the second mesa when thegiven constant time elapses from the detection. Preferably, the givenconstant time may be set longer than a process time necessary to detectthe situation. The process time may be obtained by differentiating thereflectance with respect to time in order to obtain variation in thereflectance.

According to a further aspect of the present invention, the method offabricating a surface emitting semiconductor laser includes the stepsof: forming a laminate of a first reflection mirror layer of a firstconduction type, an active region thereon, a III-V semiconductor layercontaining Al, and a second reflection mirror of a second conductiontime on the active region; etching predetermined layers that form thelaminate so that a side surface of the III-V semiconductor layer can beexposed; oxidizing the III-V semiconductor layer at a temperature equalto or lower than 375° C.; monitoring reflectance of the III-Vsemiconductor layer or its variation; and terminating oxidization of theIII-V semiconductor layer when a given constant time elapses after thereflection or its variation reaches a corresponding given value. Thus,oxidization advances at a comparatively low rate, so that theoxidization distance from the side surface of the mesa can accurately becontrolled with ease. It is therefore possible to reliably reproduce theaperture in the current confinement layer with high dimensionalaccuracy.

The III-V semiconductor layer may be oxidized at a temperature equal toor higher than about 300° C. For example, oxidization advances veryslowly at a temperature lower than 300° C. for AlAs. An oxidizationtemperature below 300° C. is not practical.

According to a still further aspect of the present of the presentinvention, the apparatus for fabricating a surface emittingsemiconductor laser having a current confinement region obtained byselectively oxidizing part of a III-V semiconductor layer containing Al,includes: a projection part that projects light onto at least the III-Vsemiconductor layer for oxidization; a photoelectric conversion partthat converts reflected light from the III-V semiconductor layer into anelectrical signal; an operation part that detects an oxidized conditionon the III-V semiconductor layer on the basis of the electrical signaland outputs a signal when advance of oxidization goes beyond a givenoxidized region; and an oxidization control part that terminatesoxidization of the III-V semiconductor layer when a given constant timeelapses after receiving the signal output by the operation part.

The above-mentioned apparatus can control the oxidization distance fromthe side surface of the mesa by monitoring the oxidized condition of theAl-contained III-V semiconductor layer. It is therefore possible toaccurately form the oxidized region in the III-V semiconductor layer andto stabilize device performance and improve the production yield.

Preferably, the apparatus may further include a display part thatdisplays the oxidized condition by using the signal output by theoperation part. The operator may visually recognize the oxidizedcondition via the display part and stop oxidizing.

According to another aspect of the present invention, the surfaceemitting semiconductor laser includes: a substrate; and a laminate onthe substrate, the laminate including a first reflection layer of afirst conduction type, an active region on the first reflection layer, acurrent confinement layer including an oxidized region, and a secondreflection layer on the current confinement layer, a mesa including arange from the second reflection layer to the current confinement layer,the oxidized region of the current confinement layer extending inwardsfrom a side surface of the mesa, and has been oxidized at a temperatureequal to or lower than 375° C. The aperture thus formed substantiallyhas dimensions as designed. The current confinement layer may be an AlAslayer or an AlGaAs layer.

Although a few preferred embodiments of the present invention have beenshown and described, it would be appreciated by those skilled in the artthat changes may be made in these embodiments without departing from theprinciples and spirit of the invention, the scope of which is defined inthe claims and their equivalents.

1. A surface emitting semiconductor laser comprising: a substrate; and alaminate on the substrate, the laminate including a first reflectionlayer of a first conduction type, an active region on the firstreflection layer, a current confinement layer including an oxidizedregion, and a second reflection layer on the current confinement layer,a mesa including a range from the second reflection layer to the currentconfinement layer, the oxidized region of the current confinement layerextending inwards from a side surface of the mesa, and has been oxidizedat a temperature equal to or lower than 375° C.
 2. The surface emittingsemiconductor laser as claimed in claim 1, wherein the currentconfinement layer is an AlAs layer.
 3. The surface emittingsemiconductor laser as claimed in claim 1, wherein the currentconfinement layer is an AlGaAs layer.